| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic TFT having a high gain. SOLUTION: The organic TFT 10 is provided with a gate electrode 16, a gate insulation film 18, and an organic semiconductor 20 that are formed in sequence on a substrate 12, and it is also provided with a source electrode 22 and a drain electrode 24 that are apart from and opposite to each other on the organic semiconductor 20. The substrate 12 is made of glass. The gate electrode 16 is made of tantalum. The gate insulation film 18 anodizes the gate electrode 16 to form a thin and dense film having a high dielectric constant relative permittivity. The organic semiconductor 20 uses a pentacene, forming a channel wherein the mobility of carrier is high. COPYRIGHT: (C)2003,JPO
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