| 摘要 |
PROBLEM TO BE SOLVED: To secure the insulation of an insulating film constituted by stacking an upper-layer highly dielectric film upon a lower-layer insulating film. SOLUTION: After a silicon oxide film or a silicon oxide-nitride film is formed on a semiconductor substrate 1 as the lower-layer insulating film 3, the film 3 is partially removed and the highly dielectric film 4 having a higher dielectric constant than the film 3 has is formed on the film 3 and the exposed portion of the substrate 1. At the time of forming the highly dielectric film 4, a non-chlorine metallic compound is used when the insulating film 3 is composed of the silicon oxide film. When the insulating film 3 is composed of the silicon nitride film, in addition, a metal chloride can be used. Consequently, the deterioration of the lower-layer insulating film 3 can be suppressed and the insulating film constituted by stacking the upper-layer highly dielectric film 4 upon the insulating film 3 can be formed by suppressing the fall of the insulating property of the insulating film. COPYRIGHT: (C)2003,JPO
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