| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent the characteristics of a ferroelectric capacitor from being deteriorated. SOLUTION: The semiconductor device comprises an insulating film 22 formed on a semiconductor substrate, a lower electrode 23 of the capacitor formed on the film 22, a dielectric film 4 of the capacitor formed on the electrode 23, an upper electrode 25 of the capacitor formed on the film 24, and a protective insulating film 28 covering the electrode 25 and the film 24 and covering a part of the electrode 23. COPYRIGHT: (C)2003,JPO
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