| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer wherein a COP free region is enlarged, flatness is improved, flaw is not formed, hays are not present on a wafer surface, a foreign matter is not left on the wafer surface, the yield of an external appearance is improved, the decrease of B concentration is restrained in a P-type wafer in which B is added, and a substrate resistance value is constant. SOLUTION: The method for manufacturing a silicon wafer is provided with a wafer cutting-out process for cutting out a wafer having a prescribed thickness from a silicon single crystal grown by a Czochralski method, a wrapping process for mechanically working the surface of the cut out wafer, an etching process for performing the surface treatment of the mechanically worked wafer surface by a chemical corrosion method, a heat treatment process for heating the wafer after the etching process at a temperature of 1200-1300°C for 1-24 hrs, and a polishing process for mirror-polishing the single surface or both surfaces of the wafer after the heat treatment by a chemical mechanical polishing method. COPYRIGHT: (C)2003,JPO
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