DRY ETCHING METHOD AND DRY ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve on both the controllability of reserved thickness on a ridge and the uniformity of etched depth in a plane without degradation in crystal quality. SOLUTION: A method has an etching process wherein a specimen 21 with a resist pattern 30 formed on its top surface is subjected to plasma-aided dry etching for the formation of a layer with its cross section having protrusions. In the etching process, the specimen 21 is heated to a temperature not lower than the point where the surface mobility of deposit begins to grow large, which is a reaction product between plasma 40 and the specimen 21 or the product resulting from the sputtering of the resist pattern 30 by plasma 40, and lower than the point where the deposit is firmly fixed on the surface of the specimen 21. COPYRIGHT: (C)2003,JPO