| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer capable of making more uniform a film thickness distribution of a silicon thin film (e.g. an epitaxial layer) of a silicon wafer (e.g. a silicon epitaxial wafer). SOLUTION: In a method for manufacturing a silicon wafer, a material gas is supplied to a main surface of a silicon single crystal substrate 2 to carry out a vapor phase growth of a silicon thin film on the main surface. The silicon single crystal substrate 2 arranged in an almost horizontal state is rotated in a plate plane direction, and simultaneously the material gas is supplied almost parallel to the main surface of the silicon single crystal substrate 2 to carry out the vapor phase growth. A course of the material gas is changed during the vapor phase growth. COPYRIGHT: (C)2003,JPO
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