| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element in which device characteristics can be improved by unifying a cooling rate of a semiconductor element melted by laser irradiation, and unifying/increasing grain sizes of growing crystals, and to provide a method for producing the element. SOLUTION: A semiconductor element 1, in which a base film 3 and a silicon film 4 are stacked in this order on a transparent substrate 2, is characterized in that the base film 3 has a higher thermal conductivity than that of the semiconductor film 4, and the semiconductor film 4 is a layer of semiconductor that is melted by irradiating the semiconductor element 1 with laser and then crystallized. COPYRIGHT: (C)2003,JPO
|
