| 摘要 |
A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire including data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A first insulating layer made of silicon nitride is deposited on the substrate, and a second insulating layer made of a photosensitive organic insulating material is coated on the first insulating layer. The second insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the first insulating layer opposite the drain electrodes. Subsequently, the first insulating layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes. |
