PROTECTIVE STRUCTURE AND METHOD FOR BLOCKING PROPAGATION OF DEFECT GENERATED IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a protective structure for blocking the propagation of defects generated in a semiconductor device.

SOLUTION: The protective structure is provided with a deep-trench isolation region 50 formed between a memory storing region 12 of the semiconductor device 10 and the logical operation circuit region 14 of the semiconductor device 10, while the deep-trench isolation region is filled with an insulation material. The deep-trench isolation region is formed below a shallow-trench isolation region 28 and the shallow-trench isolation region electrically separates a device included in the memory storage region 12 from a device included in the logical operation circuit region 14. According to this structure, the deep-trench isolation region blocks the propagation of crystalline defects generated in the logical operation circuit region into the memory storage region.

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