| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photoelectric transducer with excellent response characteristics and an excellent photoelectric conversion factor by improving the purity of a material for porous semiconductors or by lowering the iron ion concentration in a photoelectric transfer layer. <P>SOLUTION: A trap level of the photoelectric transfer layer can be reduced by improving the purity of a material for porous semiconductors used for the photoelectric transfer layer and adopting a manufacturing process of preventing iron ions from being mixed in, and thus, a photoelectric transducer having an excellent response speed and photoelectric conversion factor can be provided. <P>COPYRIGHT: (C)2003,JPO |
