| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus for uniformly treating by plasma an object being treated, such as a wafer or the like, which, in particular, uniformly performs treatment to the object that has an insulator, such as a quartz wafer or the like, as a substrate thereof by suitably adjusting the depth of a groove in a dielectric film for static absorption provided on a sample stage, and to provide a sample stage therefor. <P>SOLUTION: In the plasma treatment apparatus for treating by plasma 5 the object being treated such as the wafer 6 or the like, the depth of the groove for coolant gas provided at the dielectric film is reduced to 10% of the dielectric film or below, and thereby the distribution of application of high frequency from the underside of the dielectric of the sample stage to the object being treated on the insulation substrate is substantially uniformed and the object being treated is uniformly treated. <P>COPYRIGHT: (C)2003,JPO</p> |
