发明名称 METHOD FOR MEASURING FLATNESS OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for measuring the flatness of a wafer in a non- contact and non-destructive manner and managing the wafer. SOLUTION: The method for measuring the flatness of the semiconductor wafer comprises a step of measuring the reflecting intensity of the wafer, a step of taking data of the flatness and reflecting light intensity based on reflecting intensity, a step of forming grooves at predetermined intervals (line and space) on a first layer on a semiconductor substrate, a step of forming a second layer for flattening the step of forming the grooves of the first layer, and a step of measuring the step of forming the grooves by using an optical system. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003258050(A) 申请公布日期 2003.09.12
申请号 JP20020061950 申请日期 2002.03.07
申请人 SEIKO INSTRUMENTS INC 发明人 KAMIMURA KEISUKE
分类号 G01B11/30;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01B11/30
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