| 摘要 |
<p>Various circuit devices (14, 16 and 18) incorporating junction-traversing dislocation regions (60, 64 or 66) and methods of making the same are provided. In one aspect, a method of processing is provided that includes forming an impurity region (42) in a device region (20) of a semiconductor-on-insulator substrate (12). The impurity region (42) defines a junction (56). A dislocation region (64) is formed in the device region (20) that traverses the junction, (56). The dislocation region (64) provides a pathway to neutralize charge lingering in a floating body of a device.</p> |
