| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching device capable of keeping a plasma state stable and of improving uniformity in an etched surface. <P>SOLUTION: The plasma etching device includes a lower electrode 11 and an upper electrode 12 positioned in a treatment chamber 10, and an unillustrated semiconductor wafer is placed on the lower electrode 11. A high frequency energy supply mechanism 14 is provided on the side of the lower electrode 11. Plasma containing rings 13 (131, 132), different in outside diameters and piled one upon the other with a specified gap between, are positioned near inner walls of the treatment chamber 10, and the rings 132 nearer to the upper electrode 12 are smaller in outer diameters than the rings 131. Protrusions PRO of a specified height are formed for the plasma containing rings 13 for determining gaps G (G11, G12). Threaded openings S are formed for the protrusions PRO to be firmly fixed by ring fixing screws 15. <P>COPYRIGHT: (C)2003,JPO |
