SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the source resistance of a field effect transistor due to a GaN system semiconductor and increasing drain currents. SOLUTION: Plasma treatment is performed with a proper vacuum degree on the surface of a GaN system semiconductor 502, and the surface of the GaN system semiconductor 502 is improved, and surface potential for electrons is selectively decreased. COPYRIGHT: (C)2003,JPO