EPITAXIAL WAFER FOR FIELD EFFECT TRANSISTOR AND FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor capable of suppressing a diffusion source, and easily preparing an InGaAs channel layer whose moving degree in high. SOLUTION: An undope GaAs or AlGaAs buffer layer 6, n-type AlGaAs lower carrier supply layer 5, InGaAs channel layer 4, and n-type AlGaAs upper carrier supply layer 3 are formed on a semi-insulating GaAs substrate 7, and non-additive AlGaAs pressure-resistant layer 2 and an n-type GaAs contact layer 1 are formed on the upper part so that an epitaxial wafer for a field effect transistor having an HEMT structure can be formed. In this case, InGaAs added with Al of 0.1 to 3% is used for the InGaAs channel layer 4. COPYRIGHT: (C)2003,JPO