发明名称 FORMING METHOD OF WIRING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To prevent a short circuit between wirings embedded in an insulating film. SOLUTION: After a plurality of trenches 110 for wiring are formed in an FSG film 109 formed on a substrate 100, a barrier metal film (tantalum nitride film 111) and conducting films for wiring (copper films 112 and 113) are deposited in sequence on the FSG film 109, in such a manner that each of the trenches 110 is completely filled. After the copper films 112 and 113 outside each of the trenches 110 are eliminated by polishing, the tantalum nitride film 111 outside each of the trenches 110 is eliminated by polishing. After foreign matters stuck to the substrate 100 in the polishing are eliminated, the surface of the FSG film 109 is polished. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257976(A) 申请公布日期 2003.09.12
申请号 JP20020372080 申请日期 2002.12.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HARADA TAKASHI;YOSHIDA HIDEAKI;UEDA TETSUYA;HAMANAKA MASASHI
分类号 H01L21/3205;H01L21/304;H01L21/768;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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