发明名称 COMPOSITION FOR FORMING SILICA-BASED FILM, AND SILICA-BASED FILM AND METHOD OF FORMING THE SAME, AND ELECTRONIC COMPONENT
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming a silica-based film which allows the formation of a film having a low dielectric constant and sufficiently high mechanical strength and which is capable of preventing the abrupt application of stress when forming the film. SOLUTION: The composition for forming a silica-based film comprises (a) a siloxane resin such as an alkoxysilane, (b) a solvent such as an alcohol which can dissolve the siloxane resin, (c) an ammonium salt or the like, and (d) a pyrolytic volatile compound. The composition has a maximum value for stress near 300°C in a temperature-pressure curve which indicates a hardening characteristic. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257963(A) 申请公布日期 2003.09.12
申请号 JP20020060611 申请日期 2002.03.06
申请人 HITACHI CHEM CO LTD 发明人 SAKURAI HARUAKI;ENOMOTO KAZUHIRO;ABE KOICHI;NOBE SHIGERU
分类号 C08G77/04;C09D5/25;C09D183/02;C09D183/04;C09D183/08;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/312 主分类号 C08G77/04
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