发明名称 |
COMPOSITION FOR FORMING SILICA-BASED FILM, AND SILICA-BASED FILM AND METHOD OF FORMING THE SAME, AND ELECTRONIC COMPONENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a silica-based film which allows the formation of a film having a low dielectric constant and sufficiently high mechanical strength and which is capable of preventing the abrupt application of stress when forming the film. SOLUTION: The composition for forming a silica-based film comprises (a) a siloxane resin such as an alkoxysilane, (b) a solvent such as an alcohol which can dissolve the siloxane resin, (c) an ammonium salt or the like, and (d) a pyrolytic volatile compound. The composition has a maximum value for stress near 300°C in a temperature-pressure curve which indicates a hardening characteristic. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003257963(A) |
申请公布日期 |
2003.09.12 |
申请号 |
JP20020060611 |
申请日期 |
2002.03.06 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
SAKURAI HARUAKI;ENOMOTO KAZUHIRO;ABE KOICHI;NOBE SHIGERU |
分类号 |
C08G77/04;C09D5/25;C09D183/02;C09D183/04;C09D183/08;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/312 |
主分类号 |
C08G77/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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