| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which raises temperature controllability in a wafer plane, can raise uniformity in a film thickness in the wafer plane and can manufacture a high-grade semiconductor at a high throughput. SOLUTION: A wafer 1 is conveyed into a film formation chamber 2 and mounted on a susceptor 71, and the susceptor 71 is rotated and simultaneously the wafer 1 is heated. In this heating state, a film formation gas is supplied to the film formation chamber 2 to form a film on a wafer 1 surface, and a temperature of the susceptor 71 is measured by a radiation thermometer 8 at the film formation. When an output of a heater 72 is controlled based on this measured result and the wafer 1 is subjected to a film formation process, the temperature of the heater 72 is measured by a thermocouple 9, the measured temperature of the radiation thermometer 8 is corrected based on the measured result, and an output of the heater 72 is controlled based on the corrected temperature. COPYRIGHT: (C)2003,JPO
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