发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory having smaller capacity than conventional capacity without changing a position of an address input terminal even if a defective memory cell is caused after assembling by performing address pass, address fixing, and address shift by one circuit, and preventing wasteful power consumption. SOLUTION: The semiconductor memory is provided with a plurality of address input selecting circuits between a plurality of address pads and a plurality of address buffers, and each address input selecting circuit selects any one of a value fixed to an L level or an H level in accordance with values of two control signals, bit data from a corresponding address pad, and bit data from an address pad of one order lower than a corresponding address pad, and outputs the corresponding address pad. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257196(A) 申请公布日期 2003.09.12
申请号 JP20020054367 申请日期 2002.02.28
申请人 SHARP CORP 发明人 SUGIYAMA TAKASHI
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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