| 摘要 |
<p>The present invention provides for the programming on an antifuse having a dielectric disposed between a plurality of conductive elements with one of the conductive elements connected to a capacitor. The antifuse is programmed to an 'on' state by precharging the capacitor and then applying a programming voltage to another one of the conductive elements. This results in the breakdown of the interposed dielectric to form a conductive link between the conductive elements. Immediately, following the formation of a conductive link, the electrical energy stored in the capacitor is released through the conductive link across the dielectric. Further, the capacitor can be common to a plurality of programmable antifuses and the application of the programming voltage serves to select one of the plurality of antifuses to be 'blown'. This arrangement can be realized in a FET and the device can be easily integrated in the CMOS process commonly used for the manufacture memory arrays and logic circuitry.</p> |
