| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LED element that can be manufactured with a good yield, and is suitable for optical communication. <P>SOLUTION: On a P-type GaAs substrate 1, a P-type GaAlAs clad layer 2, a P-type GaAiAs active layer 3, and an N-type GaAlAs clad layer 4 are successively provided, and additionally an N-side electrode 5 having a nearly circular shape in a plan view is provided. At both sides in a width direction, mesa etching is carried out. The mesa etching reaches the P-type active layer 3, P-type clad layer 2, and the upper section of the P-type substrate from the surface of the N-type clad layer 4. Since the PN junction plane that is the junction surface between the P-type active layer 3 and the N-clad layer 4 is formed so that the area is set to 0.053 mm<SP>2</SP>or more and 0.058 mm<SP>2</SP>or less, optical output IL becomes approximately 20.5 μA or more and approximately 23.3 μA or less, and response characteristic Tw becomes approximately -3.5 ns or more and approximately -3.0 ns or less. As a result, the element can easily conform to the standard for an LED element for communication. <P>COPYRIGHT: (C)2003,JPO |
