| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an InGaN with high quality and excellent crystallinity. <P>SOLUTION: An indium gallium nitride semiconductor (InXGa<SB>1-</SB>XN; 0<X<0.5) is formed on a substrate. The indium gallium nitride semiconductor is composed of a single crystal in which Si or Ge is doped in the range of 10<SP>18</SP>to 10<SP>20</SP>/cm<SP>3</SP>via a buffer layer grown at low temperatures and a GaN layer or an AlGaN layer grown on the buffer layer. <P>COPYRIGHT: (C)2003,JPO |
