| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a uniformly thick organic thin film that is free from unevenness on a base film wet-cleaned by using a low-viscosity organic material. <P>SOLUTION: After the base film 11 formed on a semiconductor substrate 10 is wet-cleaned by using CO<SB>2</SB>-containing washing water 12, a trimethyl silanol 13 is produced on a surface of the film 11 by baking the substrate 10 in an HMDS-vapor atmosphere. As a result, the surface of the film 11 is made semi- hydrophobic so that the contact angle of the surface with water may fall within a range of 3°-30°. Thereafter, an organic thin film 14 is formed on the base film 11. <P>COPYRIGHT: (C)2003,JPO |
