| 摘要 |
PROBLEM TO BE SOLVED: To increase the gain of a field effect transistor element. SOLUTION: An operation area 3 is formed in a semiconductor substrate 2 of a field effect transistor element 1, and a gate electrode 4, a source electrode 5, and a drain electrode 6 are formed on the surface of the operating area 3 so that an FET 8 can be configured. Also, an electrode 10 for a gate connection line connected to the source electrode 5, an electrode 11 for a source connection line connected to the source electrode 5, and an electrode 12 for a drain connection line connected to the drain electrode 6 are formed on the semiconductor substrate 2. An input side slot line for supplying a signal to the FET 8 and an output side slot line for outputting the signal of the FET 8 are configured of those electrodes 10, 11, and 12. The gate electrode 4 is shaped so as to be extended to a direction almost orthogonal to the conductive direction of the signal of the input side slot line. Thus, the phase difference of signals in the gate electrode 4 can be reduced, and any gain deterioration due to the phase difference can be prevented. COPYRIGHT: (C)2003,JPO
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