| 摘要 |
PROBLEM TO BE SOLVED: To eliminate residual transfer by controlling the potential at a transfer gate part, for example, effectively while minimizing the effect of a photoelectric conversion element on the open area ratio. SOLUTION: A photodiode 110 and an FD part 112 are arranged in parallel through a transfer gate part 114 and a transfer electrode 114A is arranged on the transfer gate part 114. The transfer electrode 114A has a body part 114A1 and an extended part 114A2 and is enlarged in the direction of gate length. Since a partial extended part 114A2 is provided at the transfer electrode 114A, modulation factor of the transfer electrode 114A can be increased while suppressing reduction of area (increasing the open area ratio) at the light receiving part of the photodiode 110. Consequently, residual transfer is retarded and a solid state image sensor suitable for perfect transfer can be fabricated. COPYRIGHT: (C)2003,JPO
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