| 摘要 |
PROBLEM TO BE SOLVED: To provide a detecting method for detecting simply and rapidly an insulation defect between insulated wired conductors formed in a semiconductor device. SOLUTION: In a semiconductor memory 100 in which wired conductors 11 and 13 that are different in metal content rates are juxtaposed to each other, upper layers of the wires conductors 11 and 13 are removed, and more than two of the wired conductor 11 are connected electrically to be immersed in etching liquid 7, so that the wired conductor 13a is removed in the absence of an insulation defect between wired conductors, while a passivated film 21 is formed on the wired conductor 13a in the presence of an insulation defect portion 3 between the wired conductors, making the wired conductor 13a left. The insulation defect between the wired conductors is detected by the presence or absence of the wired conductor 13a. COPYRIGHT: (C)2003,JPO
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