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发明名称
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要
PROBLEM TO BE SOLVED: To improve the strength of a pad film. SOLUTION: A nitride film 3 is interposed between a layer insulation film 2 formed on an element formation region 1 and the pad film 4. COPYRIGHT: (C)2003,JPO
申请公布号
JP2003258018(A)
申请公布日期
2003.09.12
申请号
JP20020062203
申请日期
2002.03.07
申请人
SEIKO EPSON CORP
发明人
MACHIDA YOSHIHIKO
分类号
H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/60;H01L21/320
主分类号
H01L23/52
代理机构
代理人
主权项
地址
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