| 摘要 |
PROBLEM TO BE SOLVED: To simply converts an amorphous silicon thin-film into a single-crystal silicon thin-film in manufacturing a thin-film transistor. SOLUTION: A micro-island shaped amorphous silicon thin-film for forming a seed crystal is formed on an underlying film 2 formed on a substrate 1, and is irradiated with an excimer laser beam to change into a single crystal to form a seed crystal silicon thin-film 3. A heat-insulating film 4 is then formed, and a contact hole 5 is formed at a part that corresponds to the seed crystal silicon thin-film 3. An island-shaped amorphous silicon thin-film 22 for forming a device area is formed on the heat-insulating film 4 including the inside of the contact hole 5, and a protecting film 7 is formed. In a vacuum chamber, the temperature of the lower surface of the substrate 1 is made at 100°C, while the temperature of the upper face of the protecting film 7 is made at 700-800°C. Then, the island-shaped amorphous silicon thin-film 22 is irradiated by scanning with the excimer laser beam. A single crystal is grown around the seed crystal silicon thin-film 3 by changing the amorphous silicon thin-film 22 for forming the device area into a single crystalline silicon thin-film 6. COPYRIGHT: (C)2003,JPO
|
