发明名称 SIMULATION APPARATUS AND SIMULATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a simulation apparatus performing the simulation with regard to grating temperature regardless of grid intervals. SOLUTION: The simulation apparatus comprises an input section 11, a preparation section 12, a calculation section 13, and an output section 14. A virtual transient region 5 is set at a contact portion between a semiconductor and a metal. The thermal conductivity within the transient region 5 and the power consumption due to the contact resistance within the transient region 5 are calculated to solve the thermal conductance equation by using the calculation result. Therefore, even if the grid intervals which are set at both end surfaces of the transient region 5 change, the grating temperature becomes unvaried. Accordingly, the tolerance of the semiconductor device to heat can be predicted with a high degree of accuracy. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003256492(A) 申请公布日期 2003.09.12
申请号 JP20020054673 申请日期 2002.02.28
申请人 TOSHIBA CORP 发明人 MATSUZAWA KAZUYA
分类号 G06F17/50;H01L21/336;H01L29/00;H01L29/78;(IPC1-7):G06F17/50 主分类号 G06F17/50
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