| 摘要 |
<p>A semiconductor storage comprises a semiconductor substrate (11), a gate insulating film (12) formed on the semiconductor substrate (11), a single gate electrode (13) formed on the gate insulating film (12), two charge holding portions (61, 62) on both sides of the side wall of the gate electrode (13), source/drain regions (17, 18) corresponding to the respective charge holding portions (61, 62), and a channel region disposed under the single gate electrode (13). The memory function shouldered by the two charge holding portions (61, 62) is separated from the transistor operation function shouldered by the gate insulating film (12) while maintaining the adequate memory function. By thinning the gate insulating film (12), a short-channel effect can be easily suppressed. Since the two charge holding portions (61, 62) formed on both sides of the gate electrode (13) are isolated from each other by the gate electrode (13), the interference during write is effectively suppressed. Further, by adequately setting the voltage of the gate electrode (13), the voltage of one diffusion layer region (17), and the voltage of the other diffusion layer region (18), holes or electrons can be injected selectively injected into the charge holding portion (62) on the side of the one diffusion layer region (18). Thus, a semiconductor storage capable of carrying out a two-bit operation and easily microminiaturized is provided.</p> |
