发明名称 Semiconductor device and a method of manufacturing the same
摘要 Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.
申请公布号 US2003168740(A1) 申请公布日期 2003.09.11
申请号 US20030369766 申请日期 2003.02.21
申请人 NAKAJIMA YASUYUKI;MORITA TOSHIAKI;MATSUZAWA TOMOO;TOMOI SEIICHI;KAWANABE NAOKI 发明人 NAKAJIMA YASUYUKI;MORITA TOSHIAKI;MATSUZAWA TOMOO;TOMOI SEIICHI;KAWANABE NAOKI
分类号 H01L21/60;H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/60
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