Radiation-emitting semiconductor component used in a laser comprises a radiation-decoupling layer, a series of semiconductor layers containing a photon-emitting active layer, and two reflecting layers forming a resonator

摘要

Radiation-emitting semiconductor component with a vertical emission direction comprises a radiation-decoupling layer (12) permeable to radiation emitted from the active layer during operation, a series (14) of semiconductor layers containing a photon-emitting active layer (18), a first reflecting layer (22) arranged between the radiation-decoupling layer and the series of semiconductor layers, and a second reflecting layer (24) arranged on the side of the series of semiconductor layers facing away from the radiation-decoupling layer. The first and second reflecting layers form a resonator arranged perpendicular to a main extension direction of the series of semiconductor layers. The axis (30) of the resonator represents the vertical emission direction of the component. The reflectivity of the first reflecting layer is lower than the reflectivity of the second reflecting layer so that the vertically emitted radiation is decoupled from the component via the decoupling layer. An Independent claim is also included for the production of the above radiation-emitting semiconductor element. Preferred Features: The active layer consists of GaN, InGaN, AlGaN or In AlGaN. The first reflecting layer has a succession of GaN and AlGaN layers.