发明名称 |
Semiconductor memory cell with trench capacitor and selection transistor and method for fabricating it |
摘要 |
A semiconductor memory cell is formed in a substrate and includes a trench capacitor and a selection transistor. The trench capacitor includes a capacitor dielectric and a conductive trench filling. Disposed on the conductive trench filling is a diffusion barrier on which an epitaxial layer is formed. The selection transistor is disposed as a planar transistor above the trench capacitor. A drain doping region of the selection transistor is disposed in the epitaxial layer.
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申请公布号 |
US2003168690(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20030390871 |
申请日期 |
2003.03.17 |
申请人 |
KARCHER WOLFRAM;TEMMLER DIETMAR;SCHREMS MARTIN |
发明人 |
KARCHER WOLFRAM;TEMMLER DIETMAR;SCHREMS MARTIN |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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