发明名称 Method of fabricating magnetic yoke structures in MRAM devices
摘要 An MRAM device includes a substrate; plural conductive lines, including a bit line and a word line; and a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line. A method of fabricating a magnetic yoke in an MRAM structure includes preparing a substrate; forming a first conductive line on the substrate; fabricating a MTJ stack, including fabricating a first magnetic yoke structure about the first conductive line; forming a second conductive line on the MTJ stack; fabricating a second magnetic yoke about the second conductive line; depositing a layer of oxide on the structure; and metallizing the structure.
申请公布号 US2003168684(A1) 申请公布日期 2003.09.11
申请号 US20030385390 申请日期 2003.03.10
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 PAN WEI;HSU SHENG TENG
分类号 H01L27/105;G11C11/15;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L27/108 主分类号 H01L27/105
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