发明名称 |
Method of fabricating magnetic yoke structures in MRAM devices |
摘要 |
An MRAM device includes a substrate; plural conductive lines, including a bit line and a word line; and a MTJ stack including a pair of magnetic yoke structures, wherein each of said yoke structures surrounds a conductive line. A method of fabricating a magnetic yoke in an MRAM structure includes preparing a substrate; forming a first conductive line on the substrate; fabricating a MTJ stack, including fabricating a first magnetic yoke structure about the first conductive line; forming a second conductive line on the MTJ stack; fabricating a second magnetic yoke about the second conductive line; depositing a layer of oxide on the structure; and metallizing the structure. |
申请公布号 |
US2003168684(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20030385390 |
申请日期 |
2003.03.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
PAN WEI;HSU SHENG TENG |
分类号 |
H01L27/105;G11C11/15;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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