| 摘要 |
A wiring which is formed by filling a via hole and a wiring trench with Cu via a base film is formed by a damascene method. Thereafter, an SiC:H film is formed to cover an upper surface of the wiring. At this time, an N atom content thereof is controlled to be 8 (atm %) to 20 (atm %) by adding an N-containing gas at the time of forming the SiC:H film, thereby causing the film density of the SiC:H film to be 2.1 (g/cm3) or higher.
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