发明名称 Semiconductor device and method of manufacturing the same
摘要 There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.
申请公布号 US2003170980(A1) 申请公布日期 2003.09.11
申请号 US20030390413 申请日期 2003.03.18
申请人 MORIYA HIROSHI;IWASAKI TOMIO;MIURA HIDEO;NISHIHARA SHINJI;SAHARA MASASHI 发明人 MORIYA HIROSHI;IWASAKI TOMIO;MIURA HIDEO;NISHIHARA SHINJI;SAHARA MASASHI
分类号 H01L23/52;H01L21/3205;H01L23/532;(IPC1-7):H01L21/44 主分类号 H01L23/52
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