| 摘要 |
A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.
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