Chamber for producing layer of material on sections of substrate surface, used for atomic layer and chemical vapor deposition, has heating source formed as radiation source by which temperature on substrate surface can be changed in steps

摘要

Process chamber for producing a layer of material on sections of a surface (8) of a substrate (3) comprises: holding unit (2) for substrate; feeding and removal units (6) for gas phases of chemical precursors of the layer material; substrate feeding device (11) for introducing substrate into process chamber; heating source (9) for heating the substrate and/or substrate surface; and control unit. The control unit is used for sequentially introducing the chemical precursor compounds. The heating source (9) is formed as a radiation source, by means of which the temperature on the substrate surface can be changed in steps of more than 100 K per second. The radiation source is a heating lamp and is arranged in the chamber inner chamber (5) of the process chamber enclosed by a chamber wall (4). An Independent claim is also included for a process for depositing a layer of material on sections of a surface of a substrate.