发明名称 Top layers of metal for high performance IC's
摘要 A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
申请公布号 US2003170934(A1) 申请公布日期 2003.09.11
申请号 US20030389543 申请日期 2003.03.14
申请人 MEGIC CORPORATION 发明人 LIN MOU-SHIUNG
分类号 H01L21/02;H01L21/44;H01L21/4763;H01L21/50;H01L21/768;H01L23/52;H01L23/522;H01L23/525;H01L23/528;H01L23/532;H01L23/60;H01L27/06;H01L27/08;(IPC1-7):H01L21/44 主分类号 H01L21/02
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