Formation of diffusion barrier layer in semiconductor device, e.g. p-type metal oxide semiconductor transistor, involves forming silicon nitride barrier layer over gate dielectric layer by reacting tetrachlorosilane with ammonia

摘要

A diffusion barrier layer is formed in a semiconductor device by forming a high-constant (k) dielectric layer (14) over a substrate (10); and forming a silicon nitride barrier layer (16) over the high-k gate dielectric layer by reacting tetrachlorosilane with ammonia through chemical vapor deposition. The silicon nitride blocks the diffusion of impurities from a formed gate layer. An Independent claim is also included for the production of a semiconductor device on a substrate comprising forming a high-k gate dielectric layer over the substrate; forming a silicon nitride (Si3N4) barrier layer; forming a gate electrode layer (18) over the Si3N4 barrier layer and the gate electrode layer to form a gate structure (20); and forming source and drain regions (22) in the substrate by ion implantation.