INSULATED GATE SEMICONDUCTOR DEVICE HAVING FIRST TRENCH AND SECOND TRENCH CONNECTED TO THE SAME

摘要

A second trench (105b) is formed inside a semiconductor layer (102), penetrating a base layer (103) and moreover extends along a second direction (D2) while being connected to one end portion of each first portion (P1) of a first trench (105a) extending along a first direction (D1). A second gate control electrode (107b) is connected to a first gate control electrode (107a) at the one end portion, filling the inside of the second trench (105b). A gate contact portion (109) extending along the second direction (D2) exposes part of an upper surface of the second gate control electrode (107b). A gate aluminum electrode (108) is connected to the second gate control electrode (107b) through the gate contact portion (109), protruding outside beyond an end (103e) of the base layer (103) by a distance (W0).