| 摘要 |
A thermal infrared detector has a substrate having a readout circuit and a plurality of pixels patterned on the substrate at a pitch p in the range of 15<=p<=50 (mum). Each of the pixels has a photo-sensitive area including a thin film of bolometer and spaced from the substrate, two beams by which the photo-sensitive area is supported on the substrate, and interconnections formed respectively on the beams and connecting the readout circuit and the thin film of bolometer to each other. The length of each of the beams is determined in view of the patterning accuracy of a stepper used to produce the thermal infrared detector, based on the beam length index which is calculated by dividing the length of each of the beams by one-quarter of the peripheral length of the pixel. The beam length index is given by an approximate expression using the pixel pitch as a parameter, determined depending on the thermal conductivity of the interconnection material, etc. based on an equation representing temperature resolution.
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