Process for depositing material from supply vessel comprises positioning the substrate and supply material in stack, introducing inert gas and reaction gas, expanding the gas flows, stopping the deposition, and cooling the substrate

摘要

Process for depositing material from a supply vessel comprises positioning substrate and supply material in a stack at short distance from each other before heating reaction chamber, feeding inert gas and reaction gas directly into reaction volume between supply material and substrate at elevated speed, expanding gas flows before reaching supply material to reduce gas flow speed, stopping deposition by switching inert gas and/or adjusting temperature gradient, and cooling substrate and supply material. An Independent claim is also included for a device for carrying out the deposition process, comprising: a unit for positioning the substrate (2) and the supply material (1) in a stack; a reactor (R) having an opening for the gas inlet (4) in the reactor chamber; units for expanding the gas stream; regulating units for separately regulating the supply material and substrate; heating units; and cooling units. Preferred Features: The supply material is chalcopyrites, II-VI or III-V compounds, transition chalcogenides, silicon or germanium, preferably in solid or liquid form. The substrate is made from glass, quartz, ceramic, silicon or other semiconductor material.