发明名称 |
PROCESS OF MANUFACTURE OF CHALCOPYRITE CuInSe2,Cu(In,Ga)Se2,CuGaSe2 THIN FILMS |
摘要 |
<p>FIELD: photogalvanization. SUBSTANCE: invention can find use in production of solar elements for deposition of light-absorbing layers based on multicomponent chalcopyrite compounds of copper CuInSe2,Cu(In,Ga)Se2,CuGaSe2). Essence of deposition of selenium, correspondingly on Cu-In, Cu-Ga and Cu-In-Ga metal films is carried out under atmospheric pressure in quasi-closed system with inert gas atmosphere formed by uninterrupted stream of inert gas with formation of selenium vapors from source unlimited for period of reaction and placed in same quasi-closed system at temperatures of deposition of selenium from 219 to 685 C in the course of time required for total deposition of selenium on metal film. EFFECT: reduced usage of selenium with simultaneous simplification of technology and increase of ecological safety in manufacture of chalcopyrite CuInSe2,CuGaSe2 and Cu(In,Ga)Se2 thin films of large area. 5 dwg</p> |
申请公布号 |
RU2212080(C2) |
申请公布日期 |
2003.09.10 |
申请号 |
RU20010130947 |
申请日期 |
2001.11.16 |
申请人 |
LEKTRONIKI NAN BELARUSI";G NAUCHNOE UCHREZHDENIE I EH |
发明人 |
KURDESOV FEDOR VASIL'EVICH;ZALESSKIJ VALERIJ BORISOVICH;KOVALEVSKIJ VJACHESLAV IOSIFOVICH;GREMENOK VALERIJ FELIKSOVICH |
分类号 |
H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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