| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a correction method for a mask pattern capable of correcting the mask pattern of a photomask, suppressing the shape degradation (rounding, especially) of the corner part of a resist pattern and bringing the resist pattern close to a desired pattern, and to provide the photomask, an exposure method and a semiconductor device. <P>SOLUTION: In the correction method for the mask pattern, a desired main mask pattern is corrected and the shape degradation of the corner part of the resist pattern formed by using the main mask pattern is suppressed. In the case that the main mask pattern 10 becomes a light transmission area, inner serifs 16 are added respectively to two optional adjacent corner parts 20 and 22 of the main mask pattern 10 and an outer serif 18 is added to an edge part 24 held between the two corner parts 20 and 22 (in this case, in the case that the main mask pattern becomes a light shielding area, the outer serifs 18 are added to the respective two corner parts 20 and 22 and the inner serif 16 is added to the edge part 24). And the photomask, the exposure method and the semiconductor device are provided. <P>COPYRIGHT: (C)2003,JPO |
