RESIST MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist material capable of forming a pattern without scumming by exposure with UV of ≥150 nm wavelength.

SOLUTION: The resist material using UV of ≥150 nm wavelength as a light source for exposure comprises (A) an alkali-insoluble or slightly alkali- soluble high molecular compound which has an acidic functional group protected by an acid-labile group and becomes alkali-soluble when the acid-labile group is released, (B) an acid generator and (C) at least one nonionic fluorine compound selected from nonionic fluorine-containing organosiloxane compounds having only a perfluoroalkyl-containing siloxane bond and a polyoxyethylene type polyether bond.

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