| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for accelerating a chemical reaction for forming an oxide or hydroxide film on the surface of a substrate in an open-to- atmosphere CVD method, especially a method for efficiently forming the oxide or hydroxide film at a temperature of the substrate of≤200°C, and to provide an apparatus used in the same. SOLUTION: In the open-to-atmosphere CVD method wherein the oxide or hydroxide film is deposited on the surface of the substrate by spraying a vaporized raw material together with a carrier gas onto the surface of the substrate heated under an open-to-atmosphere condition, the reaction for forming the coating film on the surface of the substrate is accelerated by impressing an electric field so that a surface creepage discharge plasma is generated in a reaction space surrounding the substrate. COPYRIGHT: (C)2003,JPO
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