BORIDE SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, AND SEMICONDUCTOR-LAYER-FORMING SUBSTRATE UTILIZING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a boride single crystal containing ZrB2or TiB2, a method for producing the same, and a semiconductor-layer-growing substrate utilizing the same. SOLUTION: The single crystal is produced by growing a starting rod based on XB2(wherein X is at least either Ti or Zr) and containing 0.05-3 wt.% at least either MoB2or WB2into a crystal rod by the floating zone process. The ZrB2or TiB2single crystal containing 0.05-3 wt.% at least either MoB2or WB2is freed from a subordinate grain boundary, so that it can be used as a substrate having the principal face for growing a semiconductor layer. COPYRIGHT: (C)2003,JPO