| 摘要 |
The heater of the present invention comprises: a metal heater made from STS, nickel, inconel, aluminum, titanium, and tungsten; and a coating layer formed on the surface of the heater, which is made from mixed metal materials, to be made from one material among AIN, Al2O3, Y2O3, SIC, nitride, and boron nitride to prevent reaction with corrosive gas including fluorine (F) gas such as NF3 and CIF3. According to the present invention, a semiconductor manufacturing process can be conducted while fundamentally preventing AlF, which is a cause for contamination of the heater, from being generated, thereby improving semiconductor manufacturing efficiency while preventing a change in heater characteristics. |
